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dc.contributor.authorÁvila-Godoy, R.
dc.contributor.authorAcosta-Najarro, D.
dc.contributor.authorCamargo-E, G.
dc.contributor.authorMagaña-Zavala, C.
dc.contributor.authorNieves, L.
dc.contributor.authorParedes-Dugarte, S.
dc.contributor.authorHidalgo-Prada, B.
dc.date.accessioned2019-05-09T12:59:29Z
dc.date.available2019-05-09T12:59:29Z
dc.date.issued2016-11
dc.identifier.citationActa Microscopica Vol. 27, No.2, 2018, pp.76-82en_US
dc.identifier.issn0798-4545
dc.identifier.urihttp://bdigital2.ula.ve:8080/xmlui/654321/1708
dc.description.abstractIn this paper, a study of structural characterization of the ternary semiconductor Ag2SnSe3 is presented. The experimental work was performed using Scanning Electron Microscopy (SEM), Selected Area Electron Diffraction (SAED) patterns, High Resolution Electron Microscopy (HREM), Annular Dark field imaging (ADF), and powder synchrotron X-ray Diffraction techniques. It was found that the semiconductor compound Ag2SnSe3 crystallizes in the monoclinic space group P2/m with cell parameters a = 7.977 Å, b = 7.912 Å, c = 13.023 Å, β = 101.734, V = 804.79 Å3.en_US
dc.language.isoesen_US
dc.publisherComité Interamericano de Sociedades para Microscopía Electrónica - CIASEMen_US
dc.subjectAg2SnSe3en_US
dc.subjectSEMen_US
dc.subjectSAEDen_US
dc.subjectHRTEMen_US
dc.subjectADFen_US
dc.subjectSynchrotronen_US
dc.titleSTRUCTURAL CHARACTERIZATION OF THE LAYERED COMPOUND Ag2SnSe3 FROM SCANNING AND TRANSMISSION ELECTRON MICROSCOPY AND SYNCHROTRON POWDER DIFFRACTIONen_US
dc.typeArticleen_US


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