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STRUCTURAL CHARACTERIZATION OF THE LAYERED COMPOUND Ag2SnSe3 FROM SCANNING AND TRANSMISSION ELECTRON MICROSCOPY AND SYNCHROTRON POWDER DIFFRACTION
dc.contributor.author | Ávila-Godoy, R. | |
dc.contributor.author | Acosta-Najarro, D. | |
dc.contributor.author | Camargo-E, G. | |
dc.contributor.author | Magaña-Zavala, C. | |
dc.contributor.author | Nieves, L. | |
dc.contributor.author | Paredes-Dugarte, S. | |
dc.contributor.author | Hidalgo-Prada, B. | |
dc.date.accessioned | 2019-05-09T12:59:29Z | |
dc.date.available | 2019-05-09T12:59:29Z | |
dc.date.issued | 2016-11 | |
dc.identifier.citation | Acta Microscopica Vol. 27, No.2, 2018, pp.76-82 | en_US |
dc.identifier.issn | 0798-4545 | |
dc.identifier.uri | http://bdigital2.ula.ve:8080/xmlui/654321/1708 | |
dc.description.abstract | In this paper, a study of structural characterization of the ternary semiconductor Ag2SnSe3 is presented. The experimental work was performed using Scanning Electron Microscopy (SEM), Selected Area Electron Diffraction (SAED) patterns, High Resolution Electron Microscopy (HREM), Annular Dark field imaging (ADF), and powder synchrotron X-ray Diffraction techniques. It was found that the semiconductor compound Ag2SnSe3 crystallizes in the monoclinic space group P2/m with cell parameters a = 7.977 Å, b = 7.912 Å, c = 13.023 Å, β = 101.734, V = 804.79 Å3. | en_US |
dc.language.iso | es | en_US |
dc.publisher | Comité Interamericano de Sociedades para Microscopía Electrónica - CIASEM | en_US |
dc.subject | Ag2SnSe3 | en_US |
dc.subject | SEM | en_US |
dc.subject | SAED | en_US |
dc.subject | HRTEM | en_US |
dc.subject | ADF | en_US |
dc.subject | Synchrotron | en_US |
dc.title | STRUCTURAL CHARACTERIZATION OF THE LAYERED COMPOUND Ag2SnSe3 FROM SCANNING AND TRANSMISSION ELECTRON MICROSCOPY AND SYNCHROTRON POWDER DIFFRACTION | en_US |
dc.type | Article | en_US |